TITLE

Heteroepitaxial growth of Ge on (100) Si by ultrahigh vacuum, chemical vapor deposition

AUTHOR(S)
Cunningham, Brian; Chu, Jack O.; Akbar, Shah
PUB. DATE
December 1991
SOURCE
Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3574
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the heteroepitaxial growth of germanium films on (100) silicon through ultrahigh vacuum, chemical vapor deposition technique. Method in determining the growth rates at different temperatures; Correlation between the typical growth rate and temperature dependence; Types of temperature regimes.
ACCESSION #
5778309

 

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