Stress-free GaAs grown on Si using a stress balance approach

Freudlich, A.; Grenet, J.C.; Neu, G.; Stobl, G.
December 1991
Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3568
Academic Journal
Examines the use of a stress balance approach in controlling the residual stress magnitude in gallium arsenide layers grown on silicon substrates. Use of strained-layer superlattices in overcoming residual stress; Effects of stress on the optical properties of the layered system; Importance of double x-ray diffraction in layer characterization.


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