Flat conduction-band alignment at the CdS/CuInSe[sub 2] thin-film solar-cell heterojunction

Morkel, M.; Weinhardt, L.; Lohmu¨ller, B.; Heske, C.; Umbach, E.; Riedl, W.; Zweigart, S.; Karg, F.
December 2001
Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4482
Academic Journal
By combining ultraviolet and x-ray photoelectron spectroscopy with inverse photoemission spectroscopy, we find that the conduction-band alignment at the CdS/CuInSe[sub 2] thin-film solar-cell heterojunction is flat (0.0±0.2 eV). Furthermore, we observe a valence-band offset of 0.8±0.2 eV. The electronic level alignment is dominated by (1) an unusually large surface band gap of the CuInSe[sub 2] thin film (1.4 eV), (2) by a reduced surface band gap of the CdS overlayer (2.2 eV) due to intermixing effects, and (3) by a general influence of the intermixing on the chemical state near the interface. © 2001 American Institute of Physics.


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