Incorporation-related structural issues for beryllium doping during growth of GaN by rf-plasma molecular-beam epitaxy

Ptak, A. J.; Wang, Lijun; Giles, N. C.; Myers, T. H.; Romano, L. T.; Tian, C.; Hockett, R. A.; Mitha, S.; Van Lierde, P.
December 2001
Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4524
Academic Journal
Beryllium incorporation was studied for both Ga-polarity and N-polarity GaN using a series of Be step-doped epitaxial layers. Dopant concentration profiles indicated that surface polarity-related incorporation differences are not pronounced for Be. Significant surface accumulation of Be occurs during growth with surface accumulations approaching a monolayer for heavier doping levels. Transmission electron microscopy studies indicate the surface layer of Be has a significant effect on the microstructure, particularly for near monolayer coverage. © 2001 American Institute of Physics.


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