Field emission characteristics of BN/GaN structure

Kimura, Chiharu; Yamamoto, Tomohide; Hori, Takamitsu; Sugino, Takashi
December 2001
Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4533
Academic Journal
n-type gallium nitride (GaN) layers grown on sapphire substrates by metalorganic chemical vapor deposition are used to examine field emission characteristics. The electron concentration of the GaN is 2×10[sup 17] cm[sup -3]. In order to enhance the electric field, the GaN surface is roughened by hydrogen (H[sub 2]) plasma treatment. Boron nitride (BN) films are grown on the roughened surface of the GaN by plasma-assisted chemical vapor deposition. The turn-on electric field between the anode and sample surface is estimated to be 12.4 and 8.8 V/μm from the field emission characteristics of the roughened GaN and the BN/GaN samples, respectively. It is demonstrated that BN coating is effective in improving the field emission characteristics.© 2001 American Institute of Physics.


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