TITLE

Field emission characteristics of BN/GaN structure

AUTHOR(S)
Kimura, Chiharu; Yamamoto, Tomohide; Hori, Takamitsu; Sugino, Takashi
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4533
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
n-type gallium nitride (GaN) layers grown on sapphire substrates by metalorganic chemical vapor deposition are used to examine field emission characteristics. The electron concentration of the GaN is 2×10[sup 17] cm[sup -3]. In order to enhance the electric field, the GaN surface is roughened by hydrogen (H[sub 2]) plasma treatment. Boron nitride (BN) films are grown on the roughened surface of the GaN by plasma-assisted chemical vapor deposition. The turn-on electric field between the anode and sample surface is estimated to be 12.4 and 8.8 V/μm from the field emission characteristics of the roughened GaN and the BN/GaN samples, respectively. It is demonstrated that BN coating is effective in improving the field emission characteristics.© 2001 American Institute of Physics.
ACCESSION #
5742092

 

Related Articles

  • Electron states in boron nitride nanocones. Azevedo, Sérgio; Mazzoni, Mário S. C.; Chacham, H.; Nunes, R. W. // Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2323 

    We apply first-principles calculations to study the electronic structure of boron nitride nanocones with disclinations of different angles θ = nπ/3. Nanocones with odd values of n present antiphase boundaries that cause a reduction of the work function of the nanocones, relative to the...

  • Gallium nitride growth: A 2D barrier to defects. Martiradonna, Luigi // Nature Materials;Apr2015, Vol. 14 Issue 4, p362 

    The article focuses on a study conducted by researcher Lei Zhang related to removal of structural defects through deposition of 2D graphene or hexagonal boron nitride nanosheets on gallium nitride's (GaN) first layer, which was published in the periodical "ACS Applied Materials and Interfaces."

  • Gallium Nitride Nanotube and its Application as Transistors. Chandrasekara, Bagavathi; Narayanankutty, K. A. // International Journal of Computer Applications;6/1/2012, Vol. 47, p39 

    In search of opto-electronic nano materials, we often come across Gallium Nitride nanotubes (GaN-NT) with excellent electrical and optical characteristics. Gallium Nitride nanotubes are predominantly semiconducting and have been less explored in its application as a transistor channel through...

  • Atypical phonon modes in zinc-blende BN/GaN superlattices. Talwar, Devki N. // Applied Physics Letters;6/24/2013, Vol. 102 Issue 25, p252101 

    Comprehensive results of the atomic vibrations are reported in unconventional short-period zb BN/GaN superlattices (SLs) by exploiting a rigid-ion-model and taking into account both the short-range and long-range Coulomb interactions. Besides the anisotropic mode behavior of optical phonons, our...

  • Effect of oxygen plasma treatment on field emission characteristics of boron-nitride films. Sugino, Takashi; Tagawa, Shigeru // Applied Physics Letters;2/8/1999, Vol. 74 Issue 6, p889 

    Studies the field emission properties of boron-nitride films synthesized by plasma-assisted chemical vapor deposition. Hysteresis of the field emission characteristic for as-grown films; Degradation of the field emission characteristics; Generation of B[sub 2]O[sub 3] at the film surface.

  • Field emission from GaN surfaces roughened by hydrogen plasma treatment. Sugino, Takashi; Hori, Takamitsu; Kimura, Chiharu; Yamamoto, Tomohide // Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3229 

    GaN layers are grown on sapphire substrates with AlN buffer layers by the metalorganic chemical vapor deposition method. GaN layers are doped with Si. The electron density of the n-type GaN is 2x10[sup 17] cm[sup -3]. It is found that the GaN surface is etched with hydrogen (H[sub 2]) plasma...

  • Field emission properties of GaN films on Si(111). Berishev, I.; Bensaoula, A.; Rusakova, I.; Karabutov, A.; Ugarov, M.; Ageev, V. P. // Applied Physics Letters;9/28/1998, Vol. 73 Issue 13 

    GaN thin films were grown by electron cyclotron resonance molecular beam epitaxy on Si(111) wafers. X-ray diffraction and transmission electron microscopy revealed that the thin films were single crystals with a hexagonal symmetry and a clear textured structure. The average column size was...

  • Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality. Castiglia, A.; Carlin, J.-F.; Feltin, E.; Cosendey, G.; Dorsaz, J.; Grandjean, N. // Applied Physics Letters;9/13/2010, Vol. 97 Issue 11, p111104 

    We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer positioned below an Al0.07Ga0.93N bottom...

  • Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior. McCarson, B.L.; Schlesser, R. // Journal of Applied Physics;9/15/1998, Vol. 84 Issue 6, p3382 

    Highlights a study which investigated several field-emitted electrons' origin by performing measurements of voltage-dependent field emission energy distribution and current versus voltage on Mo tips. Indication that the tips were coated with intrinsic cubic boron nitride; Capability of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics