TITLE

Patterned growth of single-walled carbon nanotubes on full 4-inch wafers

AUTHOR(S)
Franklin, Nathan R.; Li, Yiming; Chen, Robert J.; Javey, Ali; Dai, Hongjie
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4571
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Patterned growth of single-walled carbon nanotubes (SWNTs) is achieved on full 4-in. SiO[sub 2]/Si wafers. Catalytic islands with high uniformity over the entire wafer are obtained by a deep ultraviolet photolithography technique. Growth by chemical vapor deposition of methane is found to be very sensitive to the amount of H[sub 2] co-flow. Understanding of the chemistry enables the growth of high quality SWNTs from massive arrays (10[sup 7]–10[sup 8]) of well-defined surface sites. The scale up in patterned nanotube growth shall pave the way to large-scale molecular wire devices. © 2001 American Institute of Physics.
ACCESSION #
5742079

 

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