TITLE

Plasmon waveguide for optical far/near-field conversion

AUTHOR(S)
Yatsui, T.; Kourogi, M.; Ohtsu, M.
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4583
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A plasmon waveguide was designed and fabricated using a metal-coated silicon wedge structure that converts propagating far-field light to the near field. Illumination (λ=830 nm) of the waveguide (plateau width 150 nm) caused transverse magnetic plasmon-mode excitation. Use of a near-field microscope allowed us to determine its beam width and propagation length as 150 nm and 2.5 μm, respectively. © 2001 American Institute of Physics.
ACCESSION #
5742075

 

Related Articles

  • Hybrid Plasmonic Waveguide Based on Tapered Dielectric Nanoribbon: Excitation and Focusing. Zheyu Fang; Hong Qi; Chen Wang; Xing Zhu // Plasmonics;Jun2010, Vol. 5 Issue 2, p207 

    The nanofocusing of light source was proposed and simulated using the dielectric-loaded surface plasmon polariton (SPP) model with various laterally tapered planar dielectric architectures on the top surface of the metal. By using finite-difference time-domain method, enhancement factor for the...

  • Integration of photonic and silver nanowire plasmonic waveguides. Pyayt, Anna L.; Wiley, Benjamin; Younan Xia; Chen, Antao; Dalton, Larry // Nature Nanotechnology;Nov2008, Vol. 3 Issue 11, p660 

    Future optical data transmission modules will require the integration of more than 10,000 × 10,000 input and output channels to increase data transmission rates and capacity. This level of integration, which greatly exceeds that of a conventional diffraction-limited photonic integrated...

  • Shallow Wafer Defects. Pope, David // Industrial Physicist;Sep1998, Vol. 4 Issue 3, p26 

    Focuses on the methods of detecting flaws of large-scale integrated circuit. Advantage of scanning infrared microscopy on silicon transparency; Development of optical shallow-defect analyzer (OSDA) by Hitachi Ltd.; Use of OSDA on grown-in defects in wafers by Czochralski process.

  • High spatial resolution subsurface microscopy. Ippolito, S. B.; Goldberg, B. B.; Ünlü, M. S. // Applied Physics Letters;6/25/2001, Vol. 78 Issue 26, p4071 

    We present a high-spatial-resolution subsurface microscopy technique that significantly increases the numerical aperture of a microscope without introducing an additional spherical aberration. Consequently, the diffraction-limited spatial resolution is improved beyond the limit of standard...

  • Sampled waveform measurement in integrated circuits using heterodyne electrostatic force microscopy. Bridges, G. E.; Said, R. A.; Mittal, M.; Thomson, D. J. // Review of Scientific Instruments;Nov94, Vol. 65 Issue 11, p3378 

    A high-resolution noncontact scanned probe technique has been developed for sampling the internal signals of an operating integrated circuit. The signal waveform is extracted by sensing the localized electrostatic force between a small probe and point on the circuit being measured. A heterodyne...

  • Metrology For High-Frequency Nanoelectronics. Wallis, T. Mitch; Imtiaz, Atif; Nembach, Hans T.; Rice, Paul; Kabos, Pavel // AIP Conference Proceedings;9/26/2007, Vol. 931 Issue 1, p525 

    Two metrological tools for high-frequency measurements of nanoscale systems are described: (i) two/N-port analysis of nanoscale devices as well as (ii) near-field scanning microwave microscopy (NSMM) for materials characterization. Calibrated two/N-port measurements were made on multiwalled...

  • Optical-fiber refractive-index measurement takes a new direction. YABLON, ANDREW D. // Laser Focus World;Jul2011, Vol. 47 Issue 7, p57 

    The article presents several techniques in measuring the refractive-index profile (RIP) of an optical fiber in the U.S. It includes the differential interference contrast (DIC) provides image contrast from phase variation, quantitative phase microscopy (QPM) maps refractive index of an axially...

  • Submicron imaging of buried integrated circuit structures using scanning confocal electron microscopy. Frigo, Sean P.; Levine, Zachary H.; Zaluzec, Nestor J. // Applied Physics Letters;9/9/2002, Vol. 81 Issue 11, p2112 

    Two-dimensional images of model integrated circuit components were collected using the technique of scanning confocal electron microscopy. For structures embedded about 5 µm below the surface of a silicon oxide dielectric, a lateral resolution of 76±9 nm was measured. Elemental mapping via...

  • Emission microscopy locates chip-level defects. Hurley, Daniel T. // Laser Focus World;Nov99, Vol. 35 Issue 11, pS15 

    Discusses the effectiveness of emission microscopy in locating chip-level defects. Factors which extend the range of emission microscopy applications; Process of removing silicon to reduce frontside metallization; Role of binning in the imaging of emissions.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics