Polymer PBT/n-GaN metal–insulator–semiconductor structure

Tu, L. W.; Tsao, P. H.; Lee, K. H.; Lo, Ikai; Bai, S. J.; Wu, C. C.; Hsieh, K. Y.; Sheu, J. K.
December 2001
Applied Physics Letters;12/31/2001, Vol. 79 Issue 27, p4589
Academic Journal
Organic poly(p-phenylenebenzobisthiazole), PBT, is spin coated on n-GaN epilayer to serve as a gate insulating layer. The GaN is grown on c sapphire by the metalorganic-chemical-vapor-deposition method. A metal-insulator-semiconductor structure is fabricated with Al ohmic contact to the n-GaN, and Au/Al gate metal on top of the PBT. High-frequency capacitance measurements are performed. A doping concentration of 8.2×10[sup 16] cm[sup -3] is obtained from the capacitance in the depletion region as compared with a Hall value of 7.8×10[sup 16] cm[sup -3]. Another technique of max–min capacitance method is also used in the calculation of the doping concentration. The threshold voltage is calculated as -5.1 V, and negative charges with an effective charge number density of 9.3×10[sup 11] cm[sup -2] shift the capacitance curve towards the positive voltage side. The hysteresis phenomenon is observed and analyzed. The current–voltage curve shows a low, constant current value up to 20 V. © 2001 American Institute of Physics.


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