Silicon self-diffusion under extrinsic conditions

Ural, Ant; Griffin, P. B.; Plummer, J. D.
December 2001
Applied Physics Letters;12/24/2001, Vol. 79 Issue 26, p4328
Academic Journal
Self-diffusion in silicon is investigated under extrinsic carrier conditions by monitoring the diffusion of [sup 30]Si in isotopically enriched silicon layers with boron and phosphorus background doping. At 1000 °C, we find that the Si self-diffusion coefficient is slightly enhanced in both n- and p-type backgrounds. This is direct evidence of the existence of both negatively and positively charged native point defects in Si. We use a simple model involving three charge states to explain the data, which yield the relative contributions of these charge states to the overall self-diffusion coefficient and the locations of the deep levels they introduce in the band gap. © 2001 American Institute of Physics.


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