Effect of lattice mismatch on surface morphology of InAs quantum dots on (100) In[sub 1-x]Al[sub x]As/InP

Koo, B. H.; Hanada, T.; Makino, H.; Yao, T.
December 2001
Applied Physics Letters;12/24/2001, Vol. 79 Issue 26, p4331
Academic Journal
We present the results of the formation of the InAs quantum dots (QDs) on the (100) In[sub 1-x]Al[sub x]As(InAlAs)/InP substrate by using relaxed InAlAs buffer layers with different compositions. Variations of surface morphology of InAs QDs as a function of InAs–InAlAs lattice mismatch have been evaluated by atomic force microscopy. When the lattice mismatch increases from 2.4% to 4.2%, the size of QDs decreases, and the density of QDs increases. Each of these dependences can be fitted to a power function of the misfit unless the Al diffusion, roughness of the buffer layer, and/or the ripening of small dots modify the size and density.© 2001 American Institute of Physics.


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