Measurement of interstitial oxygen concentration in silicon below 10[sup 15] atoms/cm[sup 3]

Sassella, A.
December 2001
Applied Physics Letters;12/24/2001, Vol. 79 Issue 26, p4339
Academic Journal
The absorption coefficient of silicon at 1118 cm-1 due to the multiphonon contribution related to the combination of two transverse optical and one transverse acoustical phonons is measured at the liquid He temperature. The precise knowledge of this contribution, usually hidden by the absorption band of the unavoidable oxygen impurities, permits the quantitative measurement of interstitial oxygen concentration down to 3×10[sup 14] atoms/cm[sup 3]. © 2001 American Institute of Physics.


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