TITLE

Lattice parameters of wurtzite Al[sub 1-x]Si[sub x]N ternary alloys

AUTHOR(S)
Taniyasu, Yoshitaka; Kasu, Makoto; Kobayashi, Naoki
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/24/2001, Vol. 79 Issue 26, p4351
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Lattice constants and bond lengths of wurtzite Al[sub 1-x]Si[sub x]N ternary alloys (0≤x≤0.08) were determined by reciprocal lattice maps around Al[sub 1-x]Si[sub x]N (0002) and (11–24) reflections. The measured lattice constants obtained directly from as-grown Al[sub 1-x]Si[sub x]N layers were scattered because they include the factor of residual strain. Therefore, the lattice constants in the strain-free case were calculated from the measured lattice constants taking the residual strain into account. We found that the a-axis and c-axis lattice constants of the strain-free Al[sub 1-x]Si[sub x]N linearly decreased with the Si content as a[sub 0]=3.1113-0.1412x (Å) and c[sub 0]=4.9814-0.2299x (Å). Further, we obtained the bond length as d[sub 0]=1.86818-0.0862x (Å). The bond length is nearly equal to the interpolation between the Al–N bond and the Si–N bond. © 2001 American Institute of Physics.
ACCESSION #
5742041

 

Related Articles

  • Vibrational properties of zincblende structured ternary alloys. Rao, Mala N. // AIP Conference Proceedings;Feb2013, Vol. 1512 Issue 1, p11 

    The peculiar characteristics of vibrational spectra of zinc blende semiconductor alloys arise due to either difference in masses or contrast in bond lengths. For example, previous Raman and infrared experiments have helped in identifying two mode vibrational behaviors in mixed systems of...

  • Ternary substrates promise new OE devices. Hobbs, Jerry R. // Laser Focus World;Jul94, Vol. 30 Issue 7, p16 

    Reports on the development of single-crystal ternary ingots by researchers at Crystallod and Crystar Research. Opportunities for optoelectronic-device manufacturers; Advanced growth process for bulk ternary III-V single crystals; Features and capabilities of ternary substrates.

  • Influence of growth direction on order-disorder transition in (GaAs)[sub 1-x](Ge)[sub 2x] semiconductor alloys. Rodríguez, A. G.; Navarro-Contreras, H.; Vidal, M. A. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    We provide direct evidence of the dependence of the critical concentration of IV-type atoms at the order-disorder transition in ternary metastable (III-V)-IV, zincblende-diamond semiconductor alloys on the growth direction. The excellent agreement between the experimental and model predicted...

  • Transient Creep Characteristics in Pb-Sn-Zn Ternary Alloys. El-Daly, A.A.; Abdel-Dakin, A.M.; Yousef, M. // Egyptian Journal of Solids;2000, Vol. 23 Issue 1, p113 

    Transient creep tests were investigated under different applied stresses ranging from 3.123 to 6.83 MPa for eutectic (Pb - 65.5 Sn - 3.4 Zn) and (Pb - 65 Sn -1 Zn) ternary alloys. The transient creep is described by e[subtr] = ? t[supn] where e[subtr] and the transient creep strain and time Both...

  • Local structural order around dopant atoms in Fe- and Co-doped ternary alloys based on.... Balasubramanian, Mahalingam; Lyver, Rex // Applied Physics Letters;7/21/1997, Vol. 71 Issue 3, p330 

    Examines the local structural order of dopants in ternary alloys of the composition Ni[sub 75](Fe/Co)[sub x]Al(sub 25-x). Occupation of cobalt absorbers in the nickel sublattice; Atoms surrounding nickel in gamma'-Ni[sub 3]Al; Explanation for the absence of aluminum backscattering contributions.

  • Transient and steady-state excess carrier lifetimes in p-type HgCdTe. Fastow, R.; Nemirovsky, Y. // Applied Physics Letters;10/30/1989, Vol. 55 Issue 18, p1882 

    The transient and steady-state excess carrier lifetimes in p-type Hg0.775Cd0.225Te have been measured as a function of temperature. It is demonstrated that the transient lifetime can be greater than the steady-state lifetime by as much as a factor of 16 at 77 K. This difference is attributed to...

  • Optical constants of CdxZn1-xSe ternary alloys. Suzuki, Ken-ichi; Adachi, Sadao // Journal of Applied Physics;1/15/1998, Vol. 83 Issue 2, p1018 

    Presents a simple model for optical constants of CdxZn1-xSe ternary alloys. Information on the use of Dielectric-function-related optical constants; Examination of refractive-index dispersion of ternary alloys; Details on the function of the Se alloy system.

  • Liquid-phase epitaxial growth and characterization of low carrier concentration n- and p-type In0.53Ga0.47As. Rao, Mulpuri V. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4313 

    Presents a study which examined liquid-phase epitaxial growth and characterization of low carrier concentration n- and p-type ternary alloy indium[sub0.53]gallium[sub0.47]arsenic. Method of the study; Results and discussion; Conclusion.

  • Novel pseudoalloy approach to epitaxial growth of complex InGaAlAs multilayer structures. Fritz, I.J.; Klem, J.F. // Applied Physics Letters;5/22/1995, Vol. 66 Issue 21, p2825 

    Develops a pseudoalloy approach to describe the epitaxial growth of indium gallium aluminum arsenic ternary alloys by molecular beam epitaxy. Production of pseudoalloy by using machine-state switching; Fabrication of separate confinement, strained-layer light emitting diode; Calculation of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics