Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

Kuokstis, E.; Zhang, J.; Ryu, M.-Y.; Yang, J. W.; Simin, G.; Khan, M. Asif; Gaska, R.; Shur, M. S.
December 2001
Applied Physics Letters;12/24/2001, Vol. 79 Issue 26, p4375
Academic Journal
We report on observing a long-wavelength band in low-temperature photoluminescence (PL) spectrum of quaternary Al[sub 0.22]In[sub 0.02]Ga[sub 0.76]N/Al[sub 0.38]In[sub 0.01]Ga[sub 0.61]N multiple quantum wells (MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PL spectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field. © 2001 American Institute of Physics.


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