Electrical characteristics of a TaO[sub x]N[sub y]/ZrSi[sub x]O[sub y] stack gate dielectric for metal–oxide–semiconductor device applications

Jung, Hyungsuk; Yang, Hyundoek; Im, Kiju; Hwang, Hyunsang
December 2001
Applied Physics Letters;12/24/2001, Vol. 79 Issue 26, p4408
Academic Journal
In this letter, we describe a process for the preparation of high-quality tantalum oxynitride (TaO[sub x]N[sub y]) with zirconium silicate (ZrSi[sub x]O[sub y]) as an interfacial layer for use in gate dielectric applications. Compared with conventional chemical oxide and nitride as interfacial layers, TaO[sub x]N[sub y] metal–oxide–semiconductor capacitors using ZrSi[sub x]O[sub y] as an interfacial layer exhibit lower leakage current levels at the same oxide thickness and a lower interface state density. We were able to confirm the TaO[sub x]N[sub y]/ZrSi[sub x]O[sub y] stack structure by Auger electron spectroscopy and transmission electron microscopy analyses. Zirconium silicate is a promising interfacial layer for future high-k gate dielectric applications. © 2001 American Institute of Physics.


Related Articles

  • Low-k Dielectrics Gain Potential As Chip Sizes Shrink. Boswell, Clay // Chemical Market Reporter;9/24/2001, Vol. 260 Issue 11, pFR11 

    Reports on the applications of low-k dielectrics as insulators for semiconductors. Dielectric constant of silicon dioxide; Application of spin-on deposition on dielectric materials; Features of the spin-on dielectrics from Dow Chemical. INSET: Catalysts, by Alan Tyler and Rob Winder.

  • Spin-on stacked films for low-k[sub eff] dielectrics. Thomas, Michael E. // Solid State Technology;Jul2001, Vol. 44 Issue 7, p105 

    Proposes a pathway that will address the capability, extendibility and manufacturability options afforded by the use of spin-on low-k dielectrics in meeting the International Technology Roadmap for Semiconductors and 300mm production needs. Advantages of spin-on dielectrics; Evolution of...

  • Regenerative pulsations in semiconductor etalon due to competition between carrier generation... Tolstikhin, Valery I.; Grigor'yants, Alexander V.; van de Roer, Theo G. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2023 

    Suggests competition between carrier concentration and effective temperature effects on the dielectric function of a degenerate semiconductor in a spectral range near its fundamental absorption edge as a mechanism for regenerative pulsations in a pumped optical etalon. Repetition frequency;...

  • Dielectric response function for a quasi-one-dimensional semiconducting system. Lee, Johnson; Spector, Harold N. // Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p366 

    Presents the results of the calculation of the dielectric response function for a quasi-one-dimensional (Q1D) semiconducting system. Comparison of Q1D dielectric function to one-dimensional dielectric function; Logarithmic singularity of the dielectric function; Calculation of momentum...

  • Model dielectric function of hexagonal CdSe. Adachi, Sadao // Journal of Applied Physics;8/1/1990, Vol. 68 Issue 3, p1192 

    Presents a study which presented a calculation of the complex dielectric function at energies below and above the fundamental absorption edge of the hexagonal, wurtzite-type semiconductor CdSe. Discussion on the indirect-band-gap transitions; Influence of the indirect transitions influence on...

  • Evolution of the dielectric breakdown in Co/Al[sub 2]O[sub 3]/Co junctions by annealing. Schmalhorst, J.; Bru¨ckl, H.; Justus, M.; Thomas, A.; Reiss, G.; Vieth, M.; Gieres, G.; Wecker, J. // Journal of Applied Physics;1/1/2001, Vol. 89 Issue 1, p586 

    The temperature and dielectric stability of magnetic tunnel junctions are important requirements for magnetic memory devices and their integration in the semiconductor process technology. We have investigated the changes of the tunneling magnetoresistance (TMR), the barrier properties (height,...

  • Slow traps studied in MOS dielectrics. M.Y.M.L. // Solid State Technology;Nov96, Vol. 39 Issue 11, p56 

    Reports that researchers at Griffith University in Australia have developed a technique for characterizing slow traps in MOS dielectrics. Profiles illustrating the trap density; Attention given to slow trapping phenomena in MOS structures; Use of wide bandgap semiconductor materials; Study of...

  • Low-k loses fan base in dielectrics. Manners, David // Electronics Weekly;3/19/2003, Issue 2091, p3 

    Reports on the declining interest of the semiconductor industry in the low-k dielectric materials as of 2003. Companies which have refused to use low-k dielectric SiLK; Explanation of the low-k problem of John East, chief executive of Actel; Plan of Altera for using low-k dielectric Black Diamond.

  • Amorphous lanthanide-doped TiO[sub x] dielectric films. van Dover, R.B. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p3041 

    Examines the effect of the addition of Nd, Tb or Dy on the dielectric properties of amorphous Ti-O thin films. Substitution of the dopant for Ti which decrease the leakage current, breakdown voltage and dielectric constant of the films; Suitability for incorporation into silicon integrated...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics