Plasmon energy shift in porous silicon measured by x-ray photoelectron spectroscopy

Mannella, N.; Gabetta, G.; Parmigiani, F.
December 2001
Applied Physics Letters;12/24/2001, Vol. 79 Issue 26, p4432
Academic Journal
In order to provide experimental support for quantum confinement models describing electronic effects in porous silicon (p-Si), the Si 2s and Si 2p plasmon losses have been studied by x-ray photoelectron spectroscopy. The p-Si plasmon energy was found at a value 0.8÷1.6 eV higher than that of bulk Si (17.4 eV), as measured on the cleaned Si substrate as a reference. The magnitude of these shifts suggests possible quantum confinement effects ascribed to the p-Si nanostructures. © 2001 American Institute of Physics.


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