Magnetotunneling spectroscopy of resonant anticrossing in terahertz intersubband emitters

Williams, Benjamin S.; Callebaut, Hans; Hu, Qing; Reno, John L.
December 2001
Applied Physics Letters;12/24/2001, Vol. 79 Issue 26, p4444
Academic Journal
Intersubband transport and electroluminescence has been investigated in a double-quantum-well structure based on an intrawell (vertical) THz radiative transition. Magnetotunneling spectroscopy was used to determine subband energies, including the minimum energy separation (∼1.7 meV) between two anticrossed levels. The presence of this anticrossing indicates that in this structure, electron removal from the lower radiative state should be modeled by coherent resonant tunneling rather than incoherent sequential tunneling. © 2001 American Institute of Physics.


Related Articles

  • Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells. Pozina[a], G.; Bergman, J. P.; Monemar, B.; Takeuchi, T.; Amano, H.; Akasaki, I. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2677 

    Elucidates the nature of the recombination mechanisms responsible for the radiative transitions in InGaN/GaN multiple quantum wells (MQW) grown by metalorganic vapor phase epitaxy at 820 degree centigrade. Dominance of a strong multiple peak emissions associating with both confined levels of...

  • Effects of an electric field on exciton recombination in three-step asymmetric coupled quantum wells. Brandt, O.; Kanamoto, K.; Tokuda, Y.; Abe, Y.; Wada, Y.; Tsukada, N. // Journal of Applied Physics;2/15/1994, Vol. 75 Issue 4, p2105 

    Presents a study that examined the radiative transitions of A-oriented three-step asymmetric coupled quantum wells in an electric field by photoluminescence. Number of transitions observed in the spectra; Features of the transitions; Origin of the transitions.

  • Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot. Fukatsu, S.; Sunamura, H. // Applied Physics Letters;7/14/1997, Vol. 71 Issue 2, p258 

    Observes phononless radiative recombination across the indirect gap in type-II germanium quantum wells modulated by self-organized Stranki-Krastanow dots. Significance of the three-dimensional confinement of electrons in an electronic dot; Details on the weak oscillator strength of phononless...

  • Dynamics of barrier state electron self-localization in InGaAs/InGaAsP multiple quantum well lasers. Finzi, D.; Mikhaelashvili, N. // Applied Physics Letters;4/29/1996, Vol. 68 Issue 18, p2486 

    Assesses the process of barrier state electron lasing transitions in indium gallium arsenide/indium gallium arsenide phosphide multiple quantum lasers. Effects of carrier density on self-localization of electrons; Responses of lasing transitions to temperature; Impact of negative perturbation...

  • Intrawell and interwell intersubband transitions in multiple quantum wells for far-infrared sources. Smet, Jurgen H.; Fonstad, Clifton G.; Hu, Qing // Journal of Applied Physics;6/15/1996, Vol. 79 Issue 12, p9305 

    Presents a theoretical study of electrically pumped unipolar lasers exploiting intrawell or interwell intersubband radiative transitions in multiple quantum-well heterostructures for the generation of infrared and far-infrared radiation. Introduction to far-infrared coherent semiconductor...

  • Electroluminescence from AlGaAs/GaAs Quantum-Cascade Structures in the Terahertz Range. Zinov�ev, N. N.; Andrianov, A.V.; Nekrasov, V. Yu.; Belyakov, L. V.; Sreseli, O. M.; Hill, G.; Chamberlain, J. M. // Semiconductors;Feb2002, Vol. 36 Issue 2, p226 

    Electroluminescence from a quantum-cascade structure comprising 40 periods of GaAs/Al[sub 0.15]Ga[sub 0.85]As tunnel-coupled quantum wells (QW) was studied. A terahertz emission band in the range 1.0-1.8 THz is observed under bias exceeding 1.5-2.0 V. The emission band peak shifts linearly to...

  • Room-temperature 1.3 mum electroluminescence from strained Si[sub 1-x]Ge[sub x]/Si quantum wells. Mi, Q.; Xiao, X. // Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3177 

    Examines the room-temperature 1.3 micrometer electroluminescence from strained Si[sub 1-x]Ge[sub x]/silicon quantum wells. Origin of the electroluminescence; Estimation of the internal quantum efficiency; Requisition of minimum band offset for effective luminescence; Features of the luminescence.

  • High-brightness organic double-quantum-well electroluminescent devices. Huang, Jingsong; Jingson Huang; Yang, Kaixia; Kaixia Yang; Liu, Shiyong; Shiyong Liu; Jiang, Hongjin // Applied Physics Letters;9/18/2000, Vol. 77 Issue 12 

    An organic double-quantum-well structure electroluminescent device fabricated by a doping method is demonstrated. The device consists of N,N[sup ′]-bis-(1-naphthl)-N,N[sup ′]-diphenyl-1,1[sup ′]-biphenyl-4,4[sup ′]-diamine (NPB) used as a hole transporter, undoped...

  • Room-temperature electroluminescence from Si/Ge/Si1-xGex quantum-well diodes grown by molecular-beam epitaxy. Presting, H.; Zinke, T.; Splett, A.; Kibbel, H.; Jaros, M. // Applied Physics Letters;10/14/1996, Vol. 69 Issue 16, p2376 

    Tunable room-temperature electroluminescence, photocurrent, and photoluminescence in the near infrared (λ∼1.3 μm) has been observed from Ge/Si/Ge/Si1-xGex quantum-well (QW) diodes grown by molecular-beam epitaxy. The QWs are grown on a p+-doped <100>-Si substrate and consist of two...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics