Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films

Lebedev, A. A.; Strokan, N. B.; Ivanov, A. M.; Davydov, D. V.; Savkina, N. S.; Bogdanova, E. V.; Kuznetsov, A. N.; Yakimova, R.
December 2001
Applied Physics Letters;12/24/2001, Vol. 79 Issue 26, p4447
Academic Journal
The possibility of about 50 times the inneramplification of signals in SiC-based detectors of short-range ions is shown. The detector has an n–p–n[sup +]-like structure, where the p-type base was grown epitaxially on a 6H n[sup +]-SiC substrate. To complete the structure a Schottky barrier was made on top. Detector parameters were investigated in a “floating base” regime. Alpha particles from [sup 244]Cm were used and the augmentation of signal (E) with increasing applied voltage (U) was investigated. A superlinear increase of E was observed with a significant (tens of times) amplification of the introduced by the alpha particle nonequilibrium charge. It was also found that the nonuniformity of the diffusion-drift carrier transport parameters in the films does not exceed 10%. © 2001 American Institute of Physics.


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