Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors

Hamid, Earfan; Moraru, Daniel; Tarido, Juli Cha; Miki, Sakito; Mizuno, Takeshi; Tabe, Michiharu
December 2010
Applied Physics Letters;12/27/2010, Vol. 97 Issue 26, p262101
Academic Journal
We describe single-electron transfer between two donors in thin silicon-on-insulator field-effect transistors with phosphorus-doped channel. At low temperatures, single-electron tunneling through one donor can be identified in source-drain current/gate voltage measurements as a single current peak. On this peak, we observed hysteresis most likely as a signature of single-electron transfer with another donor. The origin of single-electron transfer is related to different intensities of coupling between each donor and the interface, as evidenced from simulations. It was found that donor-interface coupling is essential for the energetic transfer of a single-electron location within the two-donor system.


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