TITLE

Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes

AUTHOR(S)
Marinelli, C.; Bordovsky, M.; Sargent, L. J.; Gioannini, M.; Rorison, J. M.; Penty, R. V.; White, I. H.; Heard, P. J.; Benyoucef, M.; Kuball, M.; Hasnain, G.; Takeuchi, T.; Schneider, R. P.
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4076
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The key parameters in the fabrication of deep-etch high-order λ/4 Bragg gratings for short-wavelength nitride-based lasers are investigated. Calculations indicate that, for an air-gap thickness of 1.73 µm and single-spot Gaussian beam profile, the reduction in grating reflectivity due to light diffraction in the air gaps is only 17% with respect to a first-order structure with 0.1 µm air gaps. Scanning electron microscopy and microphotoluminescence characterizations confirm the validity of the numerical predictions and show that the 28%-38% reflectivity obtained from prototype focused-ion-beam-etched air/nitride gratings is mainly limited by imperfections and material disorder due to etching. Improving the etching technique would, therefore, allow standard lithographic fabrication of reduced-threshold GaN lasers. © 2001 American Institute of Physics. [DOI: 10.1063/1.1424061].
ACCESSION #
5669605

 

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