TITLE

Energy level alignment driven by electron affinity difference at 3,4,9,10-perylenetetracarboxylic dianhydride/n-GaAs(100) interfaces

AUTHOR(S)
Park, Sunggook; Kampen, Thorsten U.; Zahn, Dietrich R. T.; Braun, Walter
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4124
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ultraviolet photoemission spectroscopy (UPS) was employed to investigate the electronic structure upon deposition of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on differently treated n-GaAs(100) surfaces. Interface dipoles are found to form according to the electron affinities (EA) of the substrates and PTCDA films at the interfaces and, consequently, the vacuum level alignment rule does not hold. The results demonstrate that the energy offset between the conduction band minimum of n-doped inorganic semiconductors and the lowest unoccupied molecular orbital of organic molecular films at the interfaces can be obtained using UPS by systematically varying the EA of substrates with a known band gap. © 2001 American Institute of Physics. [DOI: 10.1063/1.1426253].
ACCESSION #
5669589

 

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