Dislocation-free and lattice-matched Si/GaP[sub 1-x]N[sub x]/Si structure for photo-electronic integrated systems

Momose, Kenji; Yonezu, Hiroo; Fujimoto, Yasuhiro; Furukawa, Yuzo; Motomura, Yoshifumi; Aiki, Kunio
December 2001
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4151
Academic Journal
We proposed a Si/III-V-N compound semiconductors/Si structure, which is applicable to optoelectronic integrated circuits (OEICs). The feature of this structure is that optoelectronic devices and Si electronic devices could be fabricated by low-temperature planar process at the same time. A dislocation-free and lattice-matched Si/GaP[sub 1 − x]N[sub x]/Si (x = 2.9%) structure, which is a basic structure for OEICs, was grown by molecular-beam epitaxy. The images of transmission electron microscopy revealed that there were no threading dislocations and misfit dislocations in the epitaxial layers. It was clarified that the Si and GaP[sub 1 &minus x]N[sub x] layers were lattice-matched to Si and had structural high crystalline quality comparable to Si substrates. © 2001 American Institute of Physics. [DOI: 10.1063/1.1425451].


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