Space-charge-limited currents in materials with Gaussian energy distributions of localized states

Arkhipov, V. I.; Heremans, P.; Emelianova, E. V.; Adriaenssens, G. J.
December 2001
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4154
Academic Journal
A model is formulated describing trap-controlled space-charge-limited currents (SCLCs) in an organic material with a Gaussian density-of-states (DOS) distribution. It is shown that SCLC is not always controlled by carrier release from localized states around the Fermi level and, therefore, a Gaussian DOS can serve as either shallow or deep distribution of localized states depending upon the carrier and/or current density. © 2001 American Institute of Physics. [DOI: 10.1063/1.1424046].


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