TITLE

On the stability of organic field-effect transistor materials

AUTHOR(S)
Scho¨n, Jan Hendrik
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4163
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Stability and degradation of transistor performance of devices based on pentacene and α-sexithiophene are investigated. In order to distinguish between effects at grain boundaries and material issues, macroscopic bicrystals were used, where transistors were prepared on a single grain as well as across a single grain boundary. The main reason for performance instabilities is the formation of oxygen-related trapping states at the grain boundary upon exposure to air. However, especially in the case of pentacene, stable hole transport properties are observed. © 2001 American Institute of Physics. [DOI: 10.1063/1.1421230].
ACCESSION #
5669576

 

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