TITLE

Characteristics of interface-engineered Josephson junctions using a YbBa[sub 2]Cu[sub 3]O[sub y] counterelectrode layer

AUTHOR(S)
Katsuno, H.; Inoue, S.; Nagano, T.; Yoshida, J.
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4189
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated interface-engineered junctions with YbBa[sub 2]Cu[sub 3]O[sub y] as the counterelectrode. The junctions fabricated on YBa[sub 2]Cu[sub 3]O[sub y] base electrodes exhibited excellent Josephson characteristics with the 1 σ-spread in I[sub c] as low as 5.4% for 16 junctions with an average I[sub c] of around 1 mA. We also confirmed that the 1 σ in I[sub c] correlates with the surface morphology of the base-electrode layer, indicating that further improvements in 1 σ would be possible by advancing the thin-film growth technology. © 2001 American Institute of Physics. [DOI: 10.1063/1.1428115].
ACCESSION #
5669566

 

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