Atomic scale measurements of the interfacial electronic structure and chemistry of zirconium silicate gate dielectrics

Muller, David A.; Wilk, Glen D.
December 2001
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4195
Academic Journal
We have examined the interfaces in Zr-silicate gate dielectrics grown on Si substrates using electron energy loss spectroscopy. The Zr-silicate interface is found to be stable with the Si substrate and the polycrystalline silicon (poly-Si) electrode under annealing to 1050 °C. At this interface, a 0.35 nm wide Zr-free interface region is observed in the as-deposited film, and does not change on annealing. The Zr-free region is too thin to take on the bulk SiO[sub 2] electronic structure, and thus is unlikely to compromise the dielectric properties of the device. For films with an Al electrode, a 2 nm reaction layer forms at the Zr-silicate interface. © 2001 American Institute of Physics. [DOI: 10.1063/1.1426268].


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