Effect of aluminum substitution in La[sub 3]Ga[sub 5]SiO[sub 14] crystals on their structure and piezoelectricity

Takeda, Hiroaki; Kumatoriya, Makoto; Shiosaki, Tadashi
December 2001
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4201
Academic Journal
Antiferroelectric lead zirconate titanate (PZT) thin films have been prepared by chemical solution deposition using oxide powders. The films were processed onto steel substrates coated with a conducting oxide layer of LaSrMnO[sub 3]. Homogeneous and uniform films up to 3.4 µm thick and with polarization saturation values up to 35 µC/cm[sup 2] have been obtained. The compositional transition from the ferroelectric to the antiferroelectric phase at the high zirconium side of the PZT phase diagram was studied by x-ray diffraction and hysteresis loop measurements as a function of the Zr/Ti ratio. Film thickness and annealing temperature dependencies are reported. © 2001 American Institute of Physics. [DOI: 10.1063/1.1426695].


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