Current crowding in InAsSb light-emitting diodes

Malyutenko, V. K.; Malyutenko, O. Yu.; Podoltsev, A. D.; Kucheryavaya, I. N.; Matveev, B. A.; Remennyi, M. A.; Stus’, N. M.
December 2001
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4228
Academic Journal
High-resolution two-dimensional infrared (IR) imaging of dynamic electronic processes in the surface-emitting p-InAsSb/n-InAsSbP light-emitting diodes (LEDs) (λ = 4.3 µm, T > 300 K) showed that forward current crowding drastically decreases efficiency of LEDs with point contacts. Current flows and IR emittance “forget” the emitting area size and geometry, whereas extended areas far off the point contacts become even “darker” with the current increase. Contrary to this, the reverse bias causes remarkable current spreading and uniform “negative emittance” distribution. Therefore the negative luminescence mode is more favorable for IR LEDs operating at higher temperatures. © 2001 American Institute of Physics. [DOI: 10.1063/1.1424065].


Related Articles

  • LED lighting market on high-growth path.  // Electronics For You;Apr2015, Vol. 3 Issue 12, p119 

    The article focuses on the 6Wresearch, which predicts that India's light emitting diode (LED) lighting market will reach 2.2 billion U.S. dollars by 2021.

  • Correction: Influence of Light Emitting Diode-Derived Blue Light Overexposure on Mouse Ocular Surface. Lee, Hyo Seok; Cui, Lian; Li, Ying; Choi, Ji Suk; Choi, Joo-Hee; Li, Zhengri; Kim, Ga Eon; Choi, Won; Yoon, Kyung Chul // PLoS ONE;11/30/2016, Vol. 11 Issue 11, p1 

    No abstract available.

  • OLED displays start small, think big.  // Laser Focus World;Oct2002, Vol. 38 Issue 10, p33 

    Focuses on the uses of polymer organic light-emitting diodes. Electric shavers' use of the diodes.

  • Hole limited recombination in polymer light-emitting diodes. Scott, J. C.; Malliaras, G. G. // Applied Physics Letters;3/15/1999, Vol. 74 Issue 11, p1510 

    Studies hole-limited recombination in polymer light-emitting diodes. Comparison of the quantum efficiencies of light emission; Use of clean, semitransparent gold anode.

  • Bipolar transport organic light emitting diodes with enhanced reliability by LiF doping. Choong, Vi-En; Vi-En Choong; Shi, Song; Song Shi; Curless, Jay; So, Franky // Applied Physics Letters;2/21/2000, Vol. 76 Issue 8 

    An electrode contact scheme based on the use of an organic LiF alloy is investigated. The performance of organic light emitting diodes (OLED) with this contact scheme in both heterojunction and bipolar transport/emitting layer (BTEL) OLED structures are compared with their counterparts with LiF...

  • Bragg scattering from periodically microstructured light emitting diodes. Lupton, John M.; Matterson, Benjamin J.; Samuel, Ifor D. W.; Samue, Ifor D.W.; Jory, Michael J.; Barnes, William L. // Applied Physics Letters;11/20/2000, Vol. 77 Issue 21 

    We present a simple method of generating a periodic wavelength scale structure in the optically active layer of a light emitting diode. This is achieved by solution deposition of a light emitting polymer on top of a corrugated substrate. The periodic structure allows waveguide modes normally...

  • Bright red organic light-emitting diodes doped with a fluorescent dye. Mitsuya, Masayuki; Suzuki, Takayuki; Koyama, Toshiki; Shirai, Hirofusa; Taniguchi, Yoshio; Satsuki, Makoto; Suga, Sadaharu // Applied Physics Letters;11/13/2000, Vol. 77 Issue 20 

    We have evaluated a synthetic red fluorescent dye, 6-methyl-3-[3-(1,1,6,6-tetramethyl-10-oxo2,3,5,6-tetrahydro-1H,4H,10H-11 -oxa-3a-aza-benzo[de]anthracen-9-yl)-acryloyl]-pyran-2,4-dione (AAAP), as a dopant for an organic light-emitting diode (LED). Bright emission of a good red (maximum...

  • Influence of the hole transport layer on the performance of organic light-emitting diodes. Giebeler, Carsten; Antoniadis, Homer // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p608 

    Investigates the influence of the hole-transporting layer (HTL) on the performance of bilayer vapor-deposited organic light-emitting diodes. Experimental procedures; Comparison of current density-voltage and luminance-voltage characteristics; Effects of HTL on operating voltage.

  • Effects of discrete trap levels on organic light emitting diodes. Yang, Jie; Shen, Jun // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2699 

    Studies the effects of discrete trap levels on organic light emitting diodes under the space charge limited conditions using a numerical model. Qualitative discussions; Formalisms; Results and discussion.

  • High-quality p-n junctions with quaternary AlInGaN/InGaN quantum wells. Chitnis, A.; Kumar, A.; Shatalov, M.; Adivarahan, V.; Lunev, A.; Yang, J. W.; Yang, J.W.; Simin, G.; Khan, M. Asif; Gaska, R.; Shur, M. // Applied Physics Letters;12/4/2000, Vol. 77 Issue 23 

    We report on quaternary AlInGaN/InGaN multiple quantum well (MQW) light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p-n junctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current-voltage...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics