TITLE

Quantum coherent transport versus diode-like effect in semiconductor-free metal/insulator structure

AUTHOR(S)
Tiusan, C.; Chshiev, M.; Iovan, A.; da Costa, V.; Stoeffler, D.; Dimopoulos, T.; Ounadjela, K.
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4231
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Quantum coherent transport in double barrier tunnel junctions has been exploited for building micrometric-size semiconductor-free diodes. At room temperature, we observe strongly asymmetric current-voltage characteristics with an asymmetry ratio increasing with the bias voltage, reaching a maximum of 20 at 1 V. Our experimental data can be perfectly explained using a theoretical model involving resonance-assisted tunneling. The coherent/resonant tunneling regime is achieved using metallic 3 nm diameter monodisperse Cu clusters, sandwiched between two Al[sub 2]O[sub 3] barriers. © 2001 American Institute of Physics. [DOI: 10.1063/1.1426685].
ACCESSION #
5669552

 

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