TITLE

Generation of 1.2 ps electrical pulses through parallel gating in ultrathin silicon photoconductive switches

AUTHOR(S)
Holzman, J. F.; Vermeulen, F. E.; Elezzabi, A. Y.
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/17/2001, Vol. 79 Issue 25, p4249
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a parallel-gating photoconductive switching technique which is capable of generating ultrashort electrical pulses. Carrier-lifetime-independent pulses as short as 1.2 ps are produced using a long-lifetime intrinsic float-zone (FZ) silicon substrate. The technique utilizes a thin FZ-silicon layer as the light-activated medium, where photoexcitation electrically contacts the switch output to both the bias line and the substrate ground plane. Model calculations based on transmission-line theory and lumped-element analysis accurately describe the experimental results. © 2001 American Institute of Physics. [DOI: 10.1063/1.1426263].
ACCESSION #
5669546

 

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