A study of temperature dependent ε[sup ″](ω) in amorphous ferroelectrics: Mode coupling theory analysis

Hwang, Yoon-Hwae; Kim, Suhwan; Oh, Jiyoung
June 2000
AIP Conference Proceedings;2000, Vol. 519 Issue 1, p170
Academic Journal
We analysed the imaginary part of frequency dependent dielectric constant ∈' (ω) of amorphous LiNbO[sub 3] at temperatures below the crystallization using the Mode coupling theory(MCT). We found that ion transportation behavior in amorphous LiNbO[sub 3]can be explained well by the MCT α relaxation predictions. We observed the α relaxation scaling in ∈' (ω) and as a result of which the a relaxation stretched exponent βDC was temperature independent with β[sub DC ... 0.6.


Related Articles

  • Giant magneto-impedance and its relaxation in Co-Fe-Si-B amorphous ribbons. Sartorelli, M.L.; Knobel, M. // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2208 

    Investigates the giant magneto-impedance and relaxation in cobalt-iron-silicon-boron amorphous ribbons. Dependence of impedance relaxation on magnetorestriction constant; Variation of the impedance aftereffect with the driving current; Connection between impedance aftereffect and conventional...

  • Thermal conductivity measurement from 30 to 750 K: the 3ω method. Cahill, David G. // Review of Scientific Instruments;Feb1990, Vol. 61 Issue 2, p802 

    An ac technique for measuring the thermal conductivity of dielectric solids between 30 and 750 K is described. This technique, the 3ω method, can be applied to bulk amorphous solids and crystals as well as amorphous films tens of microns thick. Errors from black-body radiation are calculated...

  • Disorder enhancement due to structural relaxation in amorphous Ge2Sb2Te5. Fantini, P.; Ferro, M.; Calderoni, A.; Brazzelli, S. // Applied Physics Letters;5/21/2012, Vol. 100 Issue 21, p213506 

    This work investigates the atomic structural relaxation accounting for the resistance drift of the amorphous phase of the Ge2Sb2Te5 (α-GST) chalcogenide alloy. A joint electrical and optical characterization over time on both the phase change memory cell in the reset state and the...

  • The dielectric behavior of vapor-deposited amorphous solid water and of its crystalline forms. Johari, G. P.; Hallbrucker, Andreas; Mayer, Erwin // Journal of Chemical Physics;8/15/1991, Vol. 95 Issue 4, p2955 

    The dielectric permittivity and loss of vapor-deposited amorphous solid water (ASW) have been measured for fixed frequencies of 1 and 10 kHz from 80 K to its crystallization temperature. Similar measurements have also been made on the cubic ice formed after the crystallization of ASW and the...

  • Composition-dependent crystallization of alternative gate dielectrics. van Dover, R. B.; Green, M. L.; Manchanda, L.; Schneemeyer, L. F.; Siegrist, T. // Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1459 

    We have investigated the crystallization of amorphous oxides that are considered likely candidates to replace amorphous SiO[sub 2] as the gate dielectric in advanced field-effect transistors. To avoid crystallization, the mole fraction of main-group oxide in the Zr–Si–O,...

  • Post-deposition relaxation of electronic defects in hydrogenated amorphous silicon. Parsons, G. N.; Wang, C.; Williams, M. J.; Lucovsky, G. // Applied Physics Letters;5/7/1990, Vol. 56 Issue 19, p1895 

    Electronically active defects in hydrogenated amorphous silicon thin films, deposited by the conventional glow discharge process in the temperature range between about 225 and 325 °C with ∼10–15 at. % hydrogen, undergo a thermally activated relaxation during film deposition. We...

  • Density changes and viscous flow during structural relaxation of amorphous silicon. Volkert, C. A. // Journal of Applied Physics;12/15/1993, Vol. 74 Issue 12, p7107 

    Presents information on a study which investigated the structural relaxation of amorphous silicon surface layers made by ion irradiation during heating using wafer curvature measurements. Methods; Results; Discussion.

  • Atomistic simulations of structural relaxation processes in amorphous silicon. Ishimaru, Manabu // Journal of Applied Physics;1/15/2002, Vol. 91 Issue 2, p686 

    Structural relaxation processes in amorphous silicon (α-Si) have been examined by molecular-dynamics (MD) simulations using the Tersoff interatomic potential. The α-Si networks generated by rapid quenching from liquid Si were annealed. Structural changes due to the relaxation of α-Si...

  • Dielectric Relaxation in Bi[sub 12]SiO[sub 20] : Cr Crystals. Panchenko, T. V.; Karpova, L. M.; Duda, V. M. // Physics of the Solid State;Apr2000, Vol. 42 Issue 4, p689 

    A study is reported of the temperature and frequency dependences of the permittivity and losses in Cr-doped Bi[sub 12]SiO[sub 20] crystals at sonic frequencies and in the range 300-800 K. A number of dielectric anomalies and a close-to-linear Cole-Cole diagram have been observed. The results are...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics