Characterization of the hole capacitance of hydrogenated amorphous silicon metal–insulator–semiconductor structures

Park, Hyuk-Ryeol; Lee, Suk-Ho; Lee, Byung-Taek
December 2001
Journal of Applied Physics;12/15/2001, Vol. 90 Issue 12, p6226
Academic Journal
The capatiance-voltage characteristics associated with the hole accumulation in hydrogenated amorphous silicon metal-insulator-semiconductor structures were investigated. The capacitance was measured by using an ac voltage and a quasistatic method. In the ac measurements, we observed the partial response of the hole capacitance, while the full response of the hole capacitance was confirmed by quasi-static measurements. The effect of illumination on the hole capacitance was also investigated. One possible mechanism accounting for the frequency and temperature dependencies of the hole capacitance is proposed.


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