Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry

Nagashima, Takeshi; Hangyo, Masanori
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3917
Academic Journal
We propose and demonstrate a terahertz (THz) time-domain spectroscopy combined with ellipsometry. The complex optical constants of a Si wafer with low resistivity are deduced from the measurements of the wave forms of reflected s- and p-polarized THz pulses without reference measurement. The obtained dispersion of refractive index above ∼0.2 THz shows good agreement with that predicted by the Drude theory. The complex optical constants deduced by the THz ellipsometry in the low-frequency region are strongly affected by the slight error of the ellipsometric angle originating mainly from the misalignment of the rotation angles of the polarizer and analyzer.


Related Articles

  • A study of Si implanted with oxygen using spectroscopic ellipsometry. McMarr, P. J.; Mrstik, B. J.; Barger, M. S.; Bowden, G.; Blanco, J. R. // Journal of Applied Physics;6/15/1990, Vol. 67 Issue 12, p7211 

    Presents a study that examined the chemical and physical composition of silicon (Si) semiconductor wafers implanted with oxygen using spectroscopic ellipsometry. Comparison between annealed and unannealed samples; Examination of the composition of the superficial Si layer; Analysis of the...

  • Optical constants of In[sub 0.53]Ga[sub 0.47]As/InP: Experiment and modeling. Muñoz, Martın; Holden, Todd M.; Pollak, Fred H.; Kahn, Mathias; Ritter, Dan; Kronik, Leeor; Cohen, Guy M. // Journal of Applied Physics;11/15/2002, Vol. 92 Issue 10, p5878 

    The optical constants ∊(E)=∊[SUB1](E)+i∊[SUB2](E) of unintentionally doped In[SUB0.53]Ga[SUB0.47]As lattice matched to InP have been measured at 300 K using spectral ellipsometry in the range of 0.4 to 5.1 eV. The ∊ (E) spectra displayed distinct structures associated with...

  • Determination of the composition and thickness of borophosphosilicate glass films by infrared.... Ossikovski, R.; Blayo, N. // Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1236 

    Examines the infrared ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers. Determination of the BPSG film thickness; Linear analysis of the dependence of the ellipsometric measurements on film composition; Applications of the infrared phase modulated...

  • Ellipsometric determination of the optical constants of C[sub 60] (Buckminsterfullerene) films. Ren, S.L.; Wang, Y.; Rao, A.M.; McRae, E.; Holden, J.M.; Hager, T.; KaiAn Wang; Wen-Tse Lee; Ni, H.F.; Selegue, J.; Eklund, P.C. // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2678 

    Presents the ellipsometric measurement of the optical constants of buckminsterfullerene C[sub 60] films on gold overcoated silicon(100) substrates. Measurement of the molecular orbital gap value; Details on the single-electron excitation across the gap; Nonlinear optical effects of the films.

  • InP optical constants between 0.75 and 5.0 eV determined by variable-angle spectroscopic ellipsometry. Herzinger, C. M.; Snyder, P. G.; Johs, B.; Woollam, J. A. // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1715 

    Presents a study in which indium phosphide (InP) optical constants for photon energies have been determined in the range from 0.75 to 5.0 eV, using variable-angle spectroscopic ellipsometry (VASE). Information on InP; VASE data analysis; Significance of variable-angle measurements.

  • Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis. Herzinger, C. M.; Yao, H.; Snyder, P. G.; Celii, F. G.; Kao, Y.-C.; Johs, B.; Woollam, J. A. // Journal of Applied Physics;5/1/1995, Vol. 77 Issue 9, p4677 

    Discusses a study on the determination of aluminum arsenic (AlAs) optical constants by variable angle spectroscopic ellipsometry and a multisample analysis. Tabulated and parametric optical constants; Correlation of cap optical constants and thicknesses; Examination of the role of fitting the...

  • Optical constants of Ga...In...As...Sb... lattice matched to GaSb (001): Experiment and modeling. Munoz, M.; Wei, K. // Journal of Applied Physics;2/15/2000, Vol. 87 Issue 4, p1780 

    Presents a study which investigated the optical constants of gallium alloy lattice using spectral ellipsometry. Applications of quaternary alloy lattice; Methodology used in the study; Theoretical model used.

  • Nonintrusive wafer temperature measurement using in situ ellipsometry. Kroesen, G. M. W.; Oehrlein, G. S.; Bestwick, T. D. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3390 

    Examines the use of in situ hellium neon laser ellipsometry in the measurement of silicon wafer temperature during plasma exposure. Relationship between the ellipsometric readings and the substrate temperature; Exponential change of the ellipsometric angles; Thermal expansion coefficient of...

  • Thin-film metrology of silicon-on-insulator materials. Zollner, S.; Lee, T.-C.; Noehring, K.; Konkar, A.; Theodore, N. D.; Huang, W. M.; Monk, D.; Wetteroth, T.; Wilson, S. R.; Hilfiker, J. N. // Applied Physics Letters;1/3/2000, Vol. 76 Issue 1 

    Spectroscopic rotating-analyzer ellipsometry employing a compensator was used to measure the ellipsometric angles and depolarization from 0.73 to 5.4 eV of commercial separation by implantation of oxygen wafers. The data were analyzed to find the thicknesses of the native oxide cap, the top Si...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics