TITLE

Measurement of complex optical constants of a highly doped Si wafer using terahertz ellipsometry

AUTHOR(S)
Nagashima, Takeshi; Hangyo, Masanori
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3917
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We propose and demonstrate a terahertz (THz) time-domain spectroscopy combined with ellipsometry. The complex optical constants of a Si wafer with low resistivity are deduced from the measurements of the wave forms of reflected s- and p-polarized THz pulses without reference measurement. The obtained dispersion of refractive index above ∼0.2 THz shows good agreement with that predicted by the Drude theory. The complex optical constants deduced by the THz ellipsometry in the low-frequency region are strongly affected by the slight error of the ellipsometric angle originating mainly from the misalignment of the rotation angles of the polarizer and analyzer.
ACCESSION #
5643418

 

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