Local structure and chemical valency of Mn impurities in wide-band-gap III–V magnetic alloy semiconductors Ga[sub 1-x]Mn[sub x]N

Soo, Y. L.; Kioseoglou, G.; Kim, S.; Huang, S.; Kao, Y. H.; Kuwabara, S.; Owa, S.; Kondo, T.; Munekata, H.
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3926
Academic Journal
Local structure and effective chemical valency of Mn impurity atoms incorporated in wide-band-gap (Ga,Mn)N epilayers have been investigated by using x-ray absorption fine structure techniques. The x-ray results provide direct evidence for the substitution of majority Mn atoms for the Ga sites in GaN, with an effective valency close to Mn(II), up to a rather high Mn concentration about 2 at. %. A small fraction of the impurity atoms could also form Mn clusters.


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