Annealing behavior of vacancies and Z[sub 1/2] levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy

Kawasuso, A.; Redmann, F.; Krause-Rehberg, R.; Weidner, M.; Frank, T.; Pensl, G.; Sperr, P.; Triftsha¨user, W.; Itoh, H.
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3950
Academic Journal
Annealing behavior of vacancies and the Z[sub 1/2] levels in n-type 4H-SiC epilayers after 2 MeV electron irradiation has been studied using positron annihilation and deep-level transient spectroscopy. Isochronal annealing studies indicate that silicon vacancy-related defects are primarily responsible for positron trapping. The Z[sub 1/2] levels are the predominant deep centers after irradiation and subsequent annealing at 1200 °C. Both the positron-trapping rate at vacancies and the Z[sub 1/2] concentration decrease in a similar manner while annealing from 1200 to 1500 °C. It is thus proposed that the Z[sub 1/2] levels originate from silicon vacancy-related defects.


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