TITLE

Orientation-controlled nucleation of crystal silicon grains in amorphous silicon on a rolled nickel tape substrate

AUTHOR(S)
Huh, Hwang; Shin, Jung H.
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3956
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Crystal silicon grains with grain sizes in excess of 10 µm and orientation control over all three directions were produced by depositing an amorphous silicon thin film on a cold-rolled and annealed nickel tape and annealing at 600 °C for 2 h. The needle-like morphology of the grains indicated that the crystallization was mediated by NiSi[sub 2]. All grains had their [110] axis about 21° off the surface normal. Furthermore, nearly all of them had the same rotation about the [110] axis except for presence of twins and/or type A-B formations. Despite the use of the nickel substrate, the Ni concentration within the Si film was below the detection limit of energy-dispersive x-ray spectroscopy (10[sup 19] cm[sup -3]). This low-Ni contamination level is attributed to the presence of an oxide layer between the Ni substrate and the Si film.
ACCESSION #
5643405

 

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