Grain boundary transport and vapor sensing in α-sexithiophene

Scho¨n, J. H.; Kloc, Ch.; Dodabalapur, A.; Crone, B.
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3965
Academic Journal
The charge transport through an α-sexithiophene bi-crystal exposed to various gaseous agents is investigated in the temperature range from 4 to 300 K. This method allows a comparison between intragrain and grain boundary effects. The importance of grain boundaries for gas sensing applications is demonstrated. Charged trap states are formed at the grain boundaries, which lead to the change of the potential barrier at the boundary. Consequently, the charge transport properties are affected by the gas exposure.


Related Articles

  • Determination of grain-boundary defect-state densities from transport measurements. Evans, P. V.; Nelson, S. F. // Journal of Applied Physics;3/15/1991, Vol. 69 Issue 6, p3605 

    Focuses on a study which examined the transport of majority carriers across the potential barriers found at grain boundaries in semiconductors. Transport processes that were considered; Observation about boundary transport; Details of a numerical calculations for a given barrier height with a...

  • Grain boundary electric characterization of Zn[sub 7]Sb[sub 2]O[sub 12] semiconducting ceramic: A negative temperature coefficient thermistor. Nobre, M. A. L.; Lanfredi, S. // Journal of Applied Physics;5/1/2003, Vol. 93 Issue 9, p5576 

    The electrical properties of the grain boundary region of electroceramic sensor temperature based on inverse spinel Zn[sub 7]Sb[sub 2]O[sub 12] were investigated at high temperature. The zinc antimoniate was synthesized by a chemical route based on the modified Pechini method. The electric...

  • Creation of 45 degree grain-boundary junctions by lattice engineering. Wu, X.D.; Luo, L. // Applied Physics Letters;3/16/1992, Vol. 60 Issue 11, p1381 

    Investigates the creation of 45 degree grain-boundary junctions. Types of substrates used; Application of continuous lattice match and photolithographic technique; Importance of the crystallinity of the bridge layer.

  • Improvements of microstructural and superconducting properties of.... Noji, H.; Zhou, W. // Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p833 

    Investigates the effect of cooling procedures on microstructural and superconducting properties of Bi[sub 2]Sr[sub 2]CaCu[sub 2]O[sub x] screen-printed tapes. Presence of amorphous phase in grain boundaries; Process for achieving optimum oxidation state at sintering temperature; Control of...

  • Control of the in-plane epitaxy for bi-epitaxial grain boundary junctions using a new multilayer structure. Li, M. Y.; Kao, H. L.; Chang, W. J.; Lin, C. L.; Chi, C. C.; Guan, Weiyan; Wu, M. K. // Journal of Applied Physics;5/1/1995, Vol. 77 Issue 9, p4584 

    Discusses a study on the control of the in-plane epitaxy for bi-epitaxial grain boundary junctions using a new multilayer structure. Details of the experimental procedures; Density of the junctions made on the boundary; Current-voltage characteristics of the junctions.

  • Photoresponse of a YBa2Cu3Ox grain-boundary junction. Park, J. H.; Kim, D. H.; Kim, Y. H.; Kang, W. N.; Choi, S. S.; Hahn, T. S.; Khim, Z. G. // Journal of Applied Physics;4/1/1996, Vol. 79 Issue 7, p3770 

    Presents a study which determined the photoresponse of a YBa[sub2]Cu[sub3]O[subx] grain-boundary junction as a function of chopping frequency and bias current. Theoretical background; Methodology; Results.

  • Flicker noise in YBa[sub 2]Cu[sub 3]O[sub 7-delta] bicrystal grain boundary junctions in weak.... Surya, Charles; Israeloff, N.E. // Applied Physics Letters;8/28/1995, Vol. 67 Issue 9, p1307 

    Characterizes flicker noise in YBCO bicrystal grain boundary junctions in low magnetic fields. Presence of magnetofingerprint patterns in the junction voltages; Spatial fluctuation in the critical current density along the grain boundary; Comparison between field dependencies of junction...

  • Capacitance-voltage characteristics of grain boundaries in cast polycrystalline silicon. Suresh, P. R.; Ramkumar, K.; Satyam, M. // Journal of Applied Physics;6/15/1991, Vol. 69 Issue 12, p8217 

    Details a study which measured the capacitance-voltage of grain boundaries made on cast polycrystalline silicon wafers. Description of the experimental grain boundary capacitance-voltage curves; Calculation of capacitance-voltage curves; Results and discussion.

  • The effects of donor dopant concentration on the grain boundary layer characteristics in n-doped BaTiO3 ceramics. Al-Allak, H. M.; Illingsworth, J.; Brinkman, A. W.; Russell, G. J.; Woods, J. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6477 

    Presents a study that investigated the effects of donor dopant concentration on the grain boundary layer characteristics in n-doped ceramics. Method of the study; Results and discussion; Conclusion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics