TITLE

Grain boundary transport and vapor sensing in α-sexithiophene

AUTHOR(S)
Scho¨n, J. H.; Kloc, Ch.; Dodabalapur, A.; Crone, B.
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3965
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The charge transport through an α-sexithiophene bi-crystal exposed to various gaseous agents is investigated in the temperature range from 4 to 300 K. This method allows a comparison between intragrain and grain boundary effects. The importance of grain boundaries for gas sensing applications is demonstrated. Charged trap states are formed at the grain boundaries, which lead to the change of the potential barrier at the boundary. Consequently, the charge transport properties are affected by the gas exposure.
ACCESSION #
5643402

 

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