Capture and thermal re-emission of carriers in long-wavelength InGaAs/GaAs quantum dots

De Giorgi, M.; Lingk, C.; von Plessen, G.; Feldmann, J.; De Rinaldis, S.; Passaseo, A.; De Vittorio, M.; Cingolani, R.; Lomascolo, M.
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3968
Academic Journal
We investigate the ultrafast carrier dynamics in metalorganic chemical vapor deposition-grown InGaAs/GaAs quantum dots emitting at 1.3 µm. Time-resolved photoluminescence upconversion measurements show that the carriers photoexcited in the barriers relax to the quantum-dot ground state within a few picoseconds. At low temperatures and high carrier densities, the relaxation dynamics is dominated by carrier-carrier scattering. In contrast, at room temperature, the dominant relaxation process for electrons is scattering between quantum-dot levels via multiple longitudinal optical (LO)-phonon emission. The reverse process, i.e., multiple LO-phonon absorption, governs the thermal re-emission of electrons from the quantum-dot ground state.


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