Enhanced dopant activation and elimination of end-of-range defects in BF[sub 2][sup +]-implanted silicon-on-insulator by high-density current

Lin, H. H.; Cheng, S. L.; Chen, L. J.; Chen, Chih; Tu, K. N.
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3971
Academic Journal
Enhanced dopant activation and elimination of end-of-range (EOR) defects in BF[sup +][sub 2]-implanted silicon-on-insulator (SOI) have been achieved by high-density current stressing. With the high-density current stressing, the implantation amorphous silicon underwent recrystallization, enhanced dopant activation and elimination of the (EOR) defects. The current stressing method allows the complete removal of EOR defects that has not been possible with conventional thermal annealing in the processing of high-performance SOI devices.


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