Insulator thickness dependence of tunnel magnetoresistance effect in a model of Co/Al-oxide/Co junctions

Kokado, Satoshi; Ichimura, Masahiko; Onogi, Toshiyuki; Sakuma, Akimasa; Arai, Reiko; Hayakawa, Jun; Ito, Kenchi; Suzuki, Yoshio
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3986
Academic Journal
The tunnel magnetoresistance (TMR) effect in Co/Al-oxide/Co junctions was studied on a model exhibiting positive spin polarization, in which an Al monolayer is regarded as the terminating layer of the ferromagnetic electrode, and the s electron of Al behaves as the tunnel electron. In this model, the TMR ratio decreases when an insulator becomes ultrathin. It was shown that the decrease originates from an increase in the self-energy corrections due to the electrodes with parallel magnetization configuration.


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