TITLE

Insulator thickness dependence of tunnel magnetoresistance effect in a model of Co/Al-oxide/Co junctions

AUTHOR(S)
Kokado, Satoshi; Ichimura, Masahiko; Onogi, Toshiyuki; Sakuma, Akimasa; Arai, Reiko; Hayakawa, Jun; Ito, Kenchi; Suzuki, Yoshio
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p3986
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The tunnel magnetoresistance (TMR) effect in Co/Al-oxide/Co junctions was studied on a model exhibiting positive spin polarization, in which an Al monolayer is regarded as the terminating layer of the ferromagnetic electrode, and the s electron of Al behaves as the tunnel electron. In this model, the TMR ratio decreases when an insulator becomes ultrathin. It was shown that the decrease originates from an increase in the self-energy corrections due to the electrodes with parallel magnetization configuration.
ACCESSION #
5643395

 

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