Demonstration of scaled (>=0.12 μm[sup 2]) Pb(Zr,Ti)O[sub 3] capacitors on W plugs with Al interconnect

Summerfelt, S. R.; Moise, T. S.; Xing, G.; Colombo, L.; Sakoda, T.; Gilbert, S. R.; Loke, A. L. S.; Ma, S.; Wills, L. A.; Kavari, R.; Hsu, T.; Amano, J.; Johnson, S. T.; Vestcyk, D. J.; Russell, M. W.; Bilodeau, S. M.; van Buskirk, P.
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p4004
Academic Journal
The measured switched polarization properties of integrated Pb(Zr, Ti)O[sub 3] (PZT) capacitors arrays have been found to show a small dependence on individual capacitor size in the range from 0.17 and 100 µm². These thin (90 nm) PZT capacitors have low voltage switching properties with polarization saturation of < 1.8 V with switched polarization for the smallest capacitors (0.17 μm²) still larger than 25 µC/cm². The capacitor stack consisted of TiA1N hardmask/Ir/IrO[sub x]/PZT/Ir/TiAlN on either SiO[sub 2] dielectric or W plugs. The capacitor was patterned using 248 nm lithography and etched using only one mask. For wafers without W plugs, the Ir bottom electrode was not etched. For wafers with W plugs, the entire capacitor stack was etched and electrical connection to the bottom electrode was through the W plugs. The capacitors were integrated using SiO[sub 2] dielectrics and one level of Al metallization. These data suggest that high-density, ferroelectric capacitor-based memories may be feasible.


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