High strength, low dielectric constant fluorinated silica xerogel films

Gorman, B. P.; Orozco-Teran, Rosa A.; Roepsch, Jodi A.; Dong, Hanjiang; Reidy, Richard F.; Mueller, D. W.
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p4010
Academic Journal
The mechanical, electrical, and microstructural properties of low-k fluorinated silica xerogels produced using a one step spin-on process are reported. Derived from a fluorinated silane monomer, these films are easily processed and exhibit very low dielectric constants (2.1 as processed and 2.3 after heat treating at 450 °C in air). Structural determination by Fourier transform infrared spectrophotometry indicates a fluorinated silica structure with shortened Si-O bonds; however, some of the fluorine is lost during annealing. Nanoindentation studies show high elastic moduli (12 GPa) and hardness (1 GPa). Microstructural analyses by transmission and scanning electron microscopy indicate an unusual morphology with highly linked features and pore sizes in the 20–30 nm range. We believe the low dielectric constants and robust mechanical properties are due to the unusual microstructure of these films.


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