Self-assembly of epitaxially grown Ge/Si quantum dots enhanced by As ion implantation

Gaiduk, P. I.; Larsen, A. Nylandsted; Hansen, J. Lundsgaard; Mudryj, A. V.; Samtsov, M. P.; Demenschenok, A. N.
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p4025
Academic Journal
Ge/Si islands, grown using molecular-beam epitaxy on a Si/Si[sub 0.5]Ge[sub 0.5] buffer structure modified with in situ ion implantation of 1 keV As[sup +], are investigated by transmission electron microscopy (TEM), photoluminiscence (PL), and Raman spectroscopy. Vertically correlated Ge islands are observed by TEM as a result of the implantation. A 0.8 µm PL peak is detected from the layers of self-assembled Ge quantum dots. A nonhomogeneous distribution of strain around the Ge/Si islands is deduced from the Raman scattering data. This strain is assumed to be responsible for the PL emission.


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