TITLE

Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique

AUTHOR(S)
Ólafsson, H. Ö.; Sveinbjörnsson, E. Ö.; Rudenko, T. E.; Tyagulski, I. P.; Osiyuk, I. N.; Lysenko, V. S.
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p4034
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate the usefulness of the thermally-stimulated current (TSC) technique for investigating shallow interface state defects in silicon carbide metal-oxide-semiconductor (MOS) structures. For dry oxides, low-temperature TSC measurements reveal a high density of near-interfacial oxide traps (border traps) close to the band edges of 6H-SiC. Furthermore we find that annealing the SiC/SiO[sub 2] interface in pyrogenic steam at 950 °C (reoxidation) essentially reduces the density of deep interface states, while it increases the density of shallow states. Our results agree with observations of the appearance of a negative oxide charge in reoxidized MOS capacitors and the corresponding increase of the threshold voltage in n channel metal-oxide-semiconductor field-effect transistors.
ACCESSION #
5643377

 

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