Breakdown voltage in thin III–V avalanche photodiodes

Saleh, Mohammad A.; Hayat, Majeed M.; Kwon, Oh-Hyun; Holmes, Archie L.; Campbell, Joe C.; Saleh, Bahaa E. A.; Teich, Malvin C.
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p4037
Academic Journal
The dead-space multiplication theory of Hayat and Saleh [J. Lightwave Technol. 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In[sub 0.52]Al[sub 0.48]As, and Al[sub 0.2]Ga[sub 0.8]As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate.


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