Stability of HF-etched Si(100) surfaces in oxygen ambient

Zhang, X.; Garfunkel, E.; Chabal, Y. J.; Christman, S. B.; Chaban, E. E.
December 2001
Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p4051
Academic Journal
In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si-Si bonds occurs without surface hydrogen removal, in the temperature range of 550–590 K for 1–20 mTorr O[sub 2] pressures. The kinetics of the O[sub 2] insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si-H steric hindrance for O[sub 2] to access Si-Si backbonds.


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