Electrical activation of B in the presence of boron-interstitials clusters

Mannino, Giovanni; Solmi, Sandro; Privitera, Vittorio; Bersani, Massimo
December 2001
Applied Physics Letters;12/3/2001, Vol. 79 Issue 23, p3764
Academic Journal
Boron marker-layer structures have been used to analyze the evolution of boron-interstitial clusters (BICs) formed during transient enhanced diffusion. Our approach is based on the measure of B activation by spreading resistance profiling after annealing of Si implantation damage. We investigated a wide range of implant conditions in terms of defect densities below and above the amorphization threshold of Si. We found a common behavior of BICs in terms of trapping and release processes of B atoms. The BICs density as a function of time for different concentration ratios of I and B has been determined. © 2001 American Institute of Physics.


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