TITLE

Intrinsic stress evolution in aluminum nitride thin films and the influence of multistep processing

AUTHOR(S)
Rajamani, Ashok; Beresford, Rod; Sheldon, Brian W.
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/3/2001, Vol. 79 Issue 23, p3776
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Curvature measurements were used to investigate intrinsic stresses in AlN thin films grown by molecular beam epitaxy. In situ stress evolution experiments show that tensile stress is generated at the time where individual islands coalesce into a continuous film, and for some time after coalescence. Compressive stress is also generated both before and after coalescence. Introducing an intermediate annealing stage appears to reduce tensile stress evolution after coalescence, ultimately increasing the final intrinsic compressive stress. The maximum reduction in the tensile intrinsic stress is obtained when the sample is annealed at roughly the time where the islands coalesce into a continuous film.© 2001 American Institute of Physics.
ACCESSION #
5562365

 

Related Articles

  • Indication of hysteresis in AlMnN. Frazier, R.; Thaler, G.; Overberg, M.; Gila, B.; Abernathy, C. R.; Pearton, S. J. // Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1758 

    AlN films grown by gas-source molecular beam epitaxy were doped with different levels of Mn during growth. High resolution x-ray diffraction characterization revealed good crystallinity in single phase material, with lattice constant decreasing with increasing Mn concentration. Single phase...

  • Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates. Chandrasekaran, R.; Moustakas, T. D.; Ozcan, A. S.; Ludwig, K. F.; Zhou, L.; Smith, David J. // Journal of Applied Physics;Sep2010, Vol. 108 Issue 4, p043501 

    This paper reports the growth by molecular beam epitaxy of AlN and GaN thin films on R-plane sapphire substrates. Contrary to previous findings that GaN grows with its [formula] A-plane parallel to the [formula] R-plane of sapphire, our results indicate that the crystallographic orientation of...

  • High quality heteroepitaxial AlN films on diamond. Vogg, G.; Miskys, C.R.; Garrido, J.A.; Hermann, M.; Eickhoff, M.; Stutzmann, M. // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p895 

    Heteroepitaxial AlN films grown on (100)- and (111)-oriented diamond (Cα) substrates by plasma-induced molecular beam epitaxy have been investigated by x-ray diffraction (XRD) and atomic force microscopy (AFM). High quality epitaxial growth of almost strain-free wurtzite AlN is observed for...

  • Growth of AIN by metalorganic molecular beam epitaxy. MacKenzie, J.D.; Abernathy, C.R. // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p253 

    Investigates the growth of aluminum nitride by metalorganic molecular beam epitaxy. Use of amine bonded alane precursors from a compact electron cyclotron resonance plasma source; Impurity backgrounds and surface morphologies for nitrogen and alane sources; Application of atomic force microscopy.

  • Effects of 6H-SiC surface reconstruction on lattice relaxation of AlN buffer layers in molecular-beam epitaxial growth of GaN. Suda, Jun; Miura, Kouhei; Honaga, Misako; Nishi, Yusuke; Onojima, Norio; Matsunami, Hiroyuki // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5141 

    Growth of GaN on on-axis 6H-SiC (0001)[sub Si] substrates with an AlN buffer layer was performed by molecular-beam epitaxy. The effects of SiC surface reconstruction on the lattice relaxation of AlN buffer layers and the crystalline quality of GaN layers were studied. High-temperature HCl-gas...

  • Control of the morphology transition for the growth of cubic GaN/AlN nanostructures. Martinez-Guerrero, E.; Chabuel, F.; Daudin, B.; Rouvière, J. L.; Mariette, H. // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5117 

    The Stransky-Krastanow growth mode of strained layers which gives rise to a morphology transition from two-dimensional layer to three-dimensional islands is studied in details for the cubic gallium nitride on cubic aluminum nitride (GaN/AlN) system grown by molecular beam epitaxy. Besides the...

  • Initial stage of aluminum nitride film growth on 6H-silicon carbide by plasma-assisted.... Tanaka, Satoru; Kern, R. Scott // Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p37 

    Examines the initial stage of aluminum nitride film growth on 6H-SiC(0001) substrates by plasma assisted gas source molecular beam epitaxy. Investigation in terms of growth mode and interface defects; Use of cross sectional high resolution transmission electron microscopy; Observation of...

  • Direct and indirect excitation of Er[sup 3+] ions in Er: AIN. Wu, X.; Hommerich, U. // Applied Physics Letters;4/21/1997, Vol. 70 Issue 16, p2126 

    Examines photoluminescence excitation and time-resolved photoluminescence measurements on erbium doped aluminum nitride. Growth of erbium:aluminum nitride film by metal organic molecular beam epitaxy; Result of erbium concentration; Observation of decay patterns; Life span of erbium[sup 3+]...

  • Microstructure of AlN on Si (111) grown by plasma-assisted molecular beam epitaxy. Stevens, K.S.; Ohtani, A. // Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p321 

    Examines the microstructure of aluminum nitride (AlN) on silicon (Si) (111) substrate grown by plasma-assisted molecular beam epitaxy. Use of x-ray diffraction to show the mosaic-type disorder; Decrease in AlN[0001] and Si[111] angles; Relationship between substrate temperature and peak width.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics