Thermal stability of stacked high-k dielectrics on silicon

Chang, J. P.; Lin, Y.-S.
December 2001
Applied Physics Letters;12/3/2001, Vol. 79 Issue 23, p3824
Academic Journal
The thermal stability of ZrO[sub 2]/ZrSi[sub x]O[sub y] and ZrO[sub 2]/ZrSi[sub x]O[sub y]/SiN[sub x] thin films on silicon was examined by synchrotron radiation ultraviolet photoemission spectroscopy. The ZrO[sub 2]/ZrSi[sub x]O[sub y] layer deposited by atomic-layer-controlled deposition is stoichiometric, uniform, amorphous, and has an equivalent oxide thickness of ∼1 nm and a dielectric constant of ∼18 with low leakage current. These ZrO[sub 2]/ZrSi[sub x]O[sub y] samples are thermally stable in vacuum up to 880 °C at which the film decomposed to form ZrSi[sub 2], the most thermodynamically stable metal silicide at a per zirconium atom basis, and the desorption of SiO[sub (g)] and ZrO[sub (g)] accounted for the greatly reduced oxygen and zirconium photoemission intensities. The thermal stability of ZrO[sub 2]/ZrSi[sub x]O[sub y] is improved to 950 °C when deposited on a 0.5–0.7 nm SiN[sub x] film. © 2001 American Institute of Physics.


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