TITLE

Temperature-induced change from p to n conduction in metallofullerene nanotube peapods

AUTHOR(S)
Chiu, P. W.; Gu, G.; Kim, G. T.; Philipp, G.; Roth, S.; Yang, S. F.; Yang, S.
PUB. DATE
December 2001
SOURCE
Applied Physics Letters;12/3/2001, Vol. 79 Issue 23, p3845
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Metallofullerene nanotube peapods were prepared by introducing Dy@C[sub 82] into the interior space of single-walled carbon nanotubes. Transport measurements show that the Dy@C[sub 82] molecules function as electron donors and transfer charge to the carbon nanotube host. The amount of charge transferred varies with the temperature. At room temperature, the doped nanotube shows p-type behavior as seen from the response to a back gate. As the temperature decreases, the conductance becomes n type and at T<215 K metallic behavior is observed, indicating the degenerate state by doping. Below about 75 K, single-electron charging phenomena dominate the transport and show irregular Coulomb blockade oscillation, implying that the insertion of Dy@C[sub 82] splits the tube into a series of several quantum dots. © 2001 American Institute of Physics.
ACCESSION #
5562341

 

Related Articles

  • Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor. Tsen, K. T.; Ferry, D. K.; Wang, Jye-Shyang; Huang, Chao-Hsiung; Lin, Hao-Hsiung // Applied Physics Letters;12/2/1996, Vol. 69 Issue 23, p3575 

    Transient electron transport in an InP p-i-n nanostructure semiconductor has been studied by subpicosecond Raman spectroscopy at T=300 K. Both the nonequilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is...

  • Controllable amplification and absorption properties in coupled-double-quantum-wells with tunneling-induced interference. Hao, X. Y.; Li, J. H.; Lü, X. Y.; Yang, X. // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;Apr2010, Vol. 56 Issue 2, p239 

    We investigate optical amplification and absorption properties under a closed-loop double-Λ configuration in an asymmetric semiconductor coupled-double-quantum-well (CDQW) nanostructure based on interband transitions (IBTs). In the proposed CDQW scheme, the amplification, absorption or...

  • Electron transport in degenerate Mn-doped ZnO nanowires. Salfi, J.; Philipose, U.; Aouba, S.; Nair, S. V.; Ruda, H. E. // Applied Physics Letters;1/15/2007, Vol. 90 Issue 3, p032104 

    The authors have performed variable-temperature electrical measurements on individual single-crystalline, Mn-doped ZnO nanowires. Using a back-gated field-effect transistor structure fabricated with electron-beam lithography, they have established that nanowires exhibit n-type conduction. At a...

  • Size-Quantization Stark Effect in Quasi-Zero-Dimensional Semiconductor Structures. Pokutnii, S. I. // Semiconductors;Sep2000, Vol. 34 Issue 9, p1079 

    A theory of the size-quantization Stark effect in semiconductor nanocrystals under conditions in which the polarization interaction of an electron (hole) with a nanocrystal surface plays the dominant role is developed. It is shown that, in the region of interband absorption, the shifts of...

  • Nano-scale transistor performance hit by quantum vortices in current flow. Bush, Steve // Electronics Weekly;11/17/2004, Issue 2171, p7 

    The article informs that the nano-scale transistor performance is hit by quantum vortices in current flow. Theoretical studies at the University of Glasgow which suggest the performance of nano-scale transistors will be degraded by unexpected spontaneously-formed quantum vortices. The vortices...

  • Production of ordered silicon nanocrystals by low-energy ion sputtering. Gago, Raúl; Vázquez, Luis; Cuerno, Rodolfo; Varela, María; Ballesteros, Carmen; Albella, José María // Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3316 

    We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si (100) substrate with 1.2 keV Ar[sup +] ions at normal incidence. Atomic force and high-resolution transmission electron microscopies show that the silicon structures are crystalline,...

  • Transitions between semiconductor and metal induced by mixed deformation in carbon nanotube devices. Yun Ren; Ke-Qiu Chen; Qing Wan; Zou, B. S.; Yan Zhang // Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p183506 

    By applying nonequilibrium Green’s functions in combination with the density-functional theory, we investigate the electronic transport properties of molecular junctions constructed by (8,0) and (9,0) carbon nanotubes with radial and elongation deformation. The results show that the...

  • Subwavelength metal-semiconductor-metal gratings boost photodetection speed.  // Laser Focus World;Sep2004, Vol. 40 Issue 9, p11 

    Reports on the plan of researchers at the Laboratorie de Photonique et de Nanostructure to create a nanoscale metal-semiconductor-metal gratings for highly efficient photodetection. Features of the subwavelength metal-semiconductors-metal gratings; Measurement for the reflectivity of fabricated...

  • Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Sanghyun Ju; Facchetti, Antonio; Yi Xuan; Liu, Jun; Ishikawa, Fumiaki; Ye, Peide; Chongwu Zhou; Marks, Tobin J.; Janes, David B. // Nature Nanotechnology;Jun2007, Vol. 2 Issue 6, p378 

    The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including ‘see-through’ and conformable products. Nanowire transistors (NWTs) are of particular interest for...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics