Faceting evolution during self-assembling of InAs/InP quantum wires

Gutie´rrez, H. R.; Cotta, M. A.; de Carvalho, M. M. G.
December 2001
Applied Physics Letters;12/3/2001, Vol. 79 Issue 23, p3854
Academic Journal
The self-assembling of InAs quantum wires on (001) InP substrates during chemical beam epitaxy has been studied. The samples were characterized by reflection high-energy electron diffraction (RHEED), atomic force microscopy, and high-resolution transmission electron microscopy (HRTEM). By monitoring the RHEED chevron structures along the [11¯0] direction, we studied the facets formation during the initial states of InAs growth. The facets angles measured by HRTEM are in perfect agreement with the angles between chevron streaks. A time dependence of the chevron streaks angles is reported and correlated to the wire formation. These results can be interpreted using nonequilibrium models existing in literature. © 2001 American Institute of Physics.


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